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Data sheet of ic-555
Typology: Summaries
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SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
Table of Contents
6.2 ESD Ratings.............................................................. 4 10.1^ Layout Guidelines ................................................. 15 6.3 Recommended Operating Conditions....................... 4 10.2^ Layout Example .................................................... 15
6.5 Electrical Characteristics .......................................... 5 11.1^ Trademarks ........................................................... 16 6.6 Typical Characteristics .............................................. 6 11.2^ Electrostatic Discharge Caution............................ 16
4 Revision History
2 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
LM555CM, LM555CN(4)^1180 mW Power Dissipation(3) LM555CMM 613 mW PDIP Package Soldering (10 Seconds) 260 °C Soldering (^) Vapor Phase (60 Seconds) 215 °C Information Small Outline Packages (SOIC and VSSOP) (^) Infrared (15 Seconds) 220 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. (3) For operating at elevated temperatures the device must be derated above 25°C based on a 150°C maximum junction temperature and a thermal resistance of 106°C/W (PDIP), 170°C/W (S0IC-8), and 204°C/W (VSSOP) junction to ambient. (4) Refer to RETS555X drawing of military LM555H and LM555J versions for specifications.
6.2 ESD Ratings
VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)^ ±500(2)^ V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) The ESD information listed is for the SOIC package.
6.3 Recommended Operating Conditions
Supply Voltage 18 V Temperature, TA 0 70 °C
Operating junction temperature, TJ 70 °C
6.4 Thermal Information
LM
THERMAL METRIC(1)^ PDIP SOIC VSSOP UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 106 170 204 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
Supply Voltage 4.5 16 V Supply Current VCC = 5 V, RL = ∞ 3 6 VCC = 15 V, RL = ∞ 10 15 mA (Low State) (3)
Timing Error, Monostable Initial Accuracy 1 % Drift with Temperature RA = 1 k to 100 kΩ, 50 ppm/°C C = 0.1 μF, (4) Accuracy over Temperature 1.5 %
Drift with Supply 0.1 % V Timing Error, Astable Initial Accuracy 2. Drift with Temperature RA, RB =1 k to 100 kΩ, 150 ppm/°C C = 0.1 μF, (4)
Accuracy over Temperature 3.0% Drift with Supply 0.30 % /V Threshold Voltage 0.667 x VCC Trigger Voltage VCC = 15 V 5 V VCC = 5 V 1.67 V
Trigger Current 0.5 0.9 μA Reset Voltage 0.4 0.5 1 V Reset Current 0.1 0.4 mA Threshold Current (5)^ 0.1 0.25 μA Control Voltage Level VCC = 15 V 9 10 11 V VCC = 5 V 2.6 3.33 4 Pin 7 Leakage Output High 1 100 nA Pin 7 Sat (6) Output Low VCC = 15 V, I 7 = 15 mA 180 mV Output Low VCC = 4.5 V, I 7 = 4.5 mA 80 200 mV
Output Voltage Drop (Low) VCC = 15 V ISINK = 10 mA 0.1 0.25 V ISINK = 50 mA 0.4 0.75 V ISINK = 100 mA 2 2.5 V ISINK = 200 mA 2.5 V
VCC = 5 V ISINK = 8 mA V ISINK = 5 mA 0.25 0.35 V
(1) All voltages are measured with respect to the ground pin, unless otherwise specified. (2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which ensures specific performance limits. This assumes that the device is within the Recommended Operating Conditions. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication of device performance. (3) Supply current when output high typically 1 mA less at VCC = 5 V. (4) Tested at VCC = 5 V and VCC = 15 V. (5) This will determine the maximum value of RA + RB for 15 V operation. The maximum total (RA + RB) is 20 MΩ. (6) No protection against excessive pin 7 current is necessary providing the package dissipation rating will not be exceeded.
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 5
www.ti.com SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015
Typical Characteristics (continued)
Figure 5. Low Output Voltage vs. Output Sink Current^ Figure 6. Low Output Voltage vs. Output Sink Current
Figure 7. Output Propagation Delay vs. Voltage Level of Figure 8. Output Propagation Delay vs. Voltage Level of Trigger Pulse Trigger Pulse
Figure 9. Discharge Transistor (Pin 7) Voltage vs. Sink Figure 10. Discharge Transistor (Pin 7) Voltage vs. Sink Current Current
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 7
COMPARATOR
TRIGGER FLIP FLOP (^) COMPARATOR
RESET
+Vcc
DISCHARGE
THRESHOLD
Vref (int)
OUTPUT
STAGE
CONTROL VOLTAGE
OUTPUT
SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
7 Detailed Description
7.1 Overview
7.2 Functional Block Diagram
7.3 Feature Description
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SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
Device Functional Modes (continued)
10 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
www.ti.com SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015
Device Functional Modes (continued)
VCC = 5 V Top Trace: Output 5V/Div. TIME = 20μs/DIV. Bottom Trace: Capacitor Voltage 1V/Div. RA = 3.9 kΩ RB = 3 kΩ C = 0.01 μF
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 11
www.ti.com SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015
Typical Application (continued)
VCC = 5 V Top Trace: Input 4 V/Div. TIME = 20 μs/DIV. Middle Trace: Output 2V/Div. RA = 9.1 kΩ Bottom Trace: Capa citor 2V/Div. C = 0.01 μF
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
Typical Application (continued)
14 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
SNAS548D – FEBRUARY 2000 – REVISED JANUARY 2015 www.ti.com
11 Device and Documentation Support
11.1 Trademarks
11.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
11.3 Glossary
12 Mechanical, Packaging, and Orderable Information
16 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com (^) 21-Oct-
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1)
Package Type Package Drawing
Pins Package Qty
Eco Plan (2)
Lead/Ball Finish (6)
MSL Peak Temp (3)
Op Temp (°C) Device Marking (4/5)
Samples
LM555CM NRND SOIC D 8 95 TBD Call TI Call TI 0 to 70 LM 555CM
LM555CM/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br)
CU SN Level-1-260C-UNLIM 0 to 70 LM 555CM LM555CMM NRND VSSOP DGK 8 1000 TBD Call TI Call TI 0 to 70 Z
LM555CMM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS & no Sb/Br)
CU SN Level-1-260C-UNLIM 0 to 70 Z
LM555CMMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS & no Sb/Br)
CU SN Level-1-260C-UNLIM 0 to 70 Z
LM555CMX NRND SOIC D 8 2500 TBD Call TI Call TI 0 to 70 LM 555CM LM555CMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br)
CU SN Level-1-260C-UNLIM 0 to 70 LM 555CM
LM555CN LIFEBUY PDIP P 8 40 TBD Call TI Call TI 0 to 70 LM 555CN LM555CN/NOPB ACTIVE PDIP P 8 40 Green (RoHS & no Sb/Br)
CU SN Level-1-NA-UNLIM 0 to 70 LM 555CN
MC1455P1 LIFEBUY PDIP P 8 40 TBD Call TI Call TI 0 to 70 LM 555CN NE555V LIFEBUY PDIP P 8 40 TBD Call TI Call TI 0 to 70 LM 555CN
(1) (^) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2) (^) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package Type
Package Drawing
Pins SPQ Reel Diameter (mm)
Reel Width W1 (mm)
(mm)
(mm)
(mm)
(mm)
(mm)
Pin Quadrant
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Oct-
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM555CMM VSSOP DGK 8 1000 210.0 185.0 35. LM555CMM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.
LM555CMMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35. LM555CMX SOIC D 8 2500 367.0 367.0 35. LM555CMX/NOPB SOIC D 8 2500 367.0 367.0 35.
PACKAGE MATERIALS INFORMATION
www.ti.com 21-Oct-
Pack Materials-Page 2